Thermally stimulated current measurements induced by pulsed electron beam excitation

摘要

Association of thermally stimulated current measurements with anexcitation by means of a pulsed electron beam constitutes a powerfultool for the investigation of traps in semiconductor materials.Carrier generation in wide-bandgap materials or discriminationbetween electron and hole traps for example can be achieved this way.Experiments performed on cadmium-zinc telluride, polycrystallinediamond and mercuric iodide illustrate the potential of thisapproach.