Nitrocellulose films have been shown to function as selfhyphen;developing resist layers that are sensitive to both lowhyphen;energy (2 keV) Ar+ions and to 193hyphen;nm UV radiation from pulsed excimer lasers. A resolution of 100 nm and aspect ratios 25:1 have been demonstrated using a stencil mask and an argon ion beam; the resolution obtained was mask limited. The sensitivity of the resist to 2hyphen;keV Ar+ions is 36 mgr;m/min at beam currents of 1 mA/cm2, allowing exposure times of 1 s for 0.5 mgr;m of resist. The material is capable of functioning as a mask material for typical semiconductor dry etching processes.
展开▼
