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机译:SI DELTA-DOPING IN GAAS - INVESTIGATION OF THE DEGREE OF CONFINEMENT AND THE EFFECTS OF POST-GROWTH ANNEALING
UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED BLACKETT LAB INTERDISCIPLINARY RES CTR LONDON SW7 2BZ ENGLAND;
X-ray-diffraction; Molecular-beam epitaxy; Doped gaas; Infrared-absorption; Vibrational-modes; Raman-scattering; Low-temperatures; Heavily si; Silicon; Layers;