Optical absorption and modulation behavior of strained InxGa1minus;xAs/GaAs(100)(xle;0.25) multiple quantum well structures grown via molecular beam epitaxy

摘要

We report on the optical absorption and modulation characteristics of strained InxGa1minus;xAs/GaAs(0.1le;xle;0.25)multiple quantum well (MQW) structures grown on GaAsthinsp;(100) substrates which also included regions of prepatterned mesas. Sharp excitonic features were realized in samples optimally grown by employing reflection highhyphen;energy electron diffraction. High optical quality MQW structures as thick as 1.5 mgr;m are realized. To date, the highest modulation per unit field at low fields (50 kV/cm) in this system is achieved.