Bandgap widening in highly conducting CdO thin film by Ti incorporation through radio frequency magnetron sputtering technique

摘要

Transparent and highly conducting thin films of cadmium oxide (CdO) with titanium doping were synthesized by using radio frequency magnetron sputtering technique. The thin films were deposited on glass and silicon substrates with different percentages of titanium at a fixed substrate temperature 473 K and a fixed pressure of 0.1 mbar in Ar atmosphere. The deposited films were characterized by studying their crystallographic structure, optical and electrical properties. X-ray diffractometer, atomic force microscope, UV-Vis-NIR spectrophotometer, and X-ray photoelectron spectrophotometer were used for different characterizations. All the films have a rock-salt structure. A systematic increase in the optical bandgap was found for the CdO thin films with Ti doping, so that it can be considered as a candidate material for different optoelectronic device applications. Electrical conductivity was also found to increase with Ti doping concentration. (C) 2007 Elsevier Ltd. All rights reserved.