Electric field induced localization in GaAlAshyphen;GaAs superlattices

摘要

Using deep level transient spectroscopy we have observed electron emission in a 50ndash;50 Aring; uniformlynhyphen;type doped GaAshyphen;GaAlAs superlattice placed in the spacehyphen;charge region of a Schottky barrier. This emission arises from carriers localized in the wells by the electric field above the barriers. This observation demonstrates that electric field induced localization in superlattices can be monitored using capacitance techniques.