Pressure dependence of arsenic diffusivity in silicon

摘要

The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000thinsp;deg;C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of minus;5.7plusmn;0.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar.