Reflection highhyphen;energy electron diffraction oscillations from vicinal surfacesmdash;a new approach to surface diffusion measurements

摘要

A simple extension of the reflection highhyphen;energy electron diffraction oscillation technique to vicinal surfaces provides a means of studying surface diffusion during molecular beam epitaxial growth. The basis of the method is described and some preliminary results for Ga diffusion during the growth of GaAs films with (001) 2times;4 and 3times;1 reconstructed surfaces are presented.