Ferromagnetic (Fe, Mn)(3)O-4/band semiconductor-Nb:SrTiO3 Schottky barrier diode was prepared and their electrical properties and electronic structure were investigated. I-V characteristics of the Schottky barrier diode are tunable via design of the effective Coulomb gap in (Fe2.5Mn0.5)O-4 ferromagnetic oxide layer, in comparison to Fe3O4. The resulting (Fe2.5Mn0.5)O-4/Nb:SrTiO3 contacts exhibit superior rectifying characteristics even at room temperature. According to the enhanced thermionic emission theory, the carrier spin polarization of (Fe2.5Mn0.5)O-4 was estimated at similar to 0.8 at 100 K and similar to 0.7 at 200 K .
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