Organosilicon deep UV positive resist consisting of poly(p‐disilanylenephenylene)

摘要

AbstractA new class of positive deep ultravoilet (UV) resists consisting of poly(p‐disilanylenephenylene)s was developed, in which a disilanylene unit and a phenylene unit are connected alternatively in the polymer main chain. These resists had very high etching resistance against oxygen plasma. The lithographic applications of a double‐layer resist system in which the poly(p‐disilanylenephenylene) film was used as the top imaging layer were examined. As a result, very high resolution and high contrast were attained. The double‐layer resist technique using organosilicon deep UV positive resist appears very promising for lithographic appli