It is important for the power FET for base station of digital wireless system to have high power and low distortion characteristics. And it is well known that these parameters are severely affected by the channel structure of FET, surface state of substrate and so on. In this study, we especially focused on the surface state, and tried to control it by intentional oxidation. At last we succeeded in improving both the power performance and distortion characteristics. Those results will be shown in this article with the results of material analysis.
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