Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, lowhyphen;temperature processing

摘要

A new fabrication process for polycrystalline silicon thin film transistors on 7059 glass substrates is reported. This unique fabrication process has the advantages of short processing time and low processing temperature (le;600thinsp;deg;C). The processing is based on the key step of using an ultrathin Pd layer, introduced to the surface of the glass prior to the deposition of anahyphen;Si:H film, to reduce the crystallization time and temperature. It is also based on using an electron cyclotron resonance hydrogen plasma to reduced the passivation time. Thenhyphen;channel TFTs produced by this new fabrication process have mobilities of 20 cm2/Vthinsp;s, and offhyphen;currents of 0.5 pA/mgr;m.