Nitride or Oxynitride films are regarded as promising materials as the substitution of conventional silicon dioxide. Because they have high dielectric constant and blocking effect to boron penetration. The purpose of this study is to perform low-temperature fabrication of the ultra thin film by utilizing activated nitrogen at low temperature. We have analyzed the composition structure in the film by means of X-ray photoelectron spectroscopy and secondary ion mass spectroscopy. We have found that the surface roughness decreased with increasing temperature by Atomic Force Microscope.
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