Dynamical electrical breakdown in the depleted Al_0.3Ga_0.7Asregion of p+ -i-n~+ diodes has been investigated in the nanosecondtimescale. A persistent conductivity due to Si-related DX centreimpact ionization in high electric fields was observed after theonset of the breakdown. From the present investigation it followsthat DX centre breakdown begins at electric fields of (1.8 ± 0.4) × 10~5 V cm~(-1) and is related to impact ionization of DX centres byfree hot carriers.
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