RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON

摘要

The range and distribution of 200hyphen; and 400hyphen;ke V boron implanted into silicon in a nonchanneling direction has been investigated by a differential capacitance method. While the range is found to correspond to that predicted from Lindhard's theory of amorphous stopping, the mean deviation does not. From the symmetry of the observed distribution, it is concluded that channeling is not responsible for the discrepancy.