Direct gain modulation of a semiconductor laser by a GaAs picosecond optoelectronic switch

摘要

We report a novel application of highhyphen;speed optoelectronic switches for direct gain modulation of semiconductor lasers. A GaAs/GaAlAs buried heterostructure laser is driven by a Crhyphen;doped GaAs photoconducting switch activated by a synchronously modehyphen;locked cw dye laser. Infrared light pulses of 55hyphen;ps width are emitted from the semiconductor laser.