Determination of electron energy distribution in a GaAs vertical fieldhyphen;effect transistor with hothyphen;electron injection

摘要

Electron energy distribution on the drain edge of a channel in a GaAs nongated vertical fieldhyphen;effect transistor with hothyphen;electron injection has been probed using hothyphen;electron spectroscopy as a function of current density up to about 105A/cm2. Electrons rapidly accelerated in ann+hyphen;ihyphen;p+hyphen;ihyphen;n+planarhyphen;doped barrier source exhibit nonequilibrium transport through a thin channel (130 nm) with deceleration due to scattering and acceleration due to the electric field. The resulting hothyphen;electron energy distribution, determined by using a planarhyphen;doped barrier as an analyzer, diverges from the steadyhyphen;state one. This divergence dramatically increases with increasing the current density.