Dependence of hydrogen passivation on growth temperature into carbon-doped GaAsSb grown by MOCVD

摘要

We investigated hydrogen passivation of carbon acceptors in C-doped GaAsSb grown by MOCVD. We clarified existence of hydrogen passivation in C-doped GaAsSb from the result that the decrease of hydrogen concentration corresponds to the increase of hole concentration after annealing. Percentage of hydrogenated C acceptors to all C acceptors in C-doped GaAsSb is smaller than that in C-doped GaAs, especially in C-doped InGaAs. We demonstrated that hydrogen passivation in C-doped GaAsSb is suppressed by growing C-doped GaAsSb at growth temperature above 525℃.