Interface analysis of Yhyphen;Bahyphen;Cuhyphen;O films on Alhyphen;coated Si substrates

摘要

Yhyphen;Bahyphen;Cuhyphen;O films were deposited on Alhyphen;coated Si substrates by the plasmahyphen;spray method. The Al buffer layer appears to be effective in yielding crackhyphen;free adhesive Yhyphen;Bahyphen;Cuhyphen;O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of xhyphen;ray microanalysis and xhyphen;ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3layer and prevents precipitation of Cu at the film/substrate interface.