Ti silicide formation on thinhyphen;film silicon on insulator

摘要

In this letter the formation of Ti silicide on thinhyphen;film silicon on insulator has been investigated. The experimental results indicated that uniform TiSi2layers with a low sheet resistance of 4.0ndash;4.5 OHgr;/laplac; can be formed on thinhyphen;film silicon on insulator with a high carrier concentration of 2times;1020/cm3. So a structure of Ti/n+hyphen;Si/SiO2/Si can be obtained. Secondaryhyphen;ion mass spectrometer profiles of the As showed that a relatively homogeneous redistribution of the As in the TiSi2layer is revealed and the As pileup at Si/SiO2interface is noticeable when the thickness of the silicon overlayer after the TiSi2formation is less than 520 Aring;.