Si and Si/P ion implantation doping of In0.5Ga0.5P and In0.5Al0.5P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33times;1013cmminus;2is achieved for a Si dose of 5times;1013cmminus;2. When an optimum dose (2.5times;1013cmminus;2) P coimplant is performed this electron concentration is increased by 65percnt;. The same dose Si implants in InAlP show a maximum effective activation of 3.9percnt; with no P coimplantation and 5.2percnt; with a Phyphen;implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2ndash;5 meV for InGaP and sim;80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Alhyphen;containing material. The reduction in sheet resistance associated with the use of Si/P coimplantation in InGaP containing heterostructures should contribute to significant performance enhancements in HFETs and lasers. copy;1996 American Institute of Physics.
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