Electrical properties of implanted and rapid thermal annealed shallowp+hyphen;njunctions

摘要

The electrical properties of shallow junctions fabricated using a 50hyphen;keV BF2ion implantation into lang;100rang;nhyphen;Si followed by rapid thermal annealing (RTA) have been investigated. The junction depth was 0.25 mgr;m. Sheet resistance measurements have shown that annealing at 950thinsp;deg;C for only 10 s results in approximately 90percnt; electrical activation. In addition this annealing cycle gives the optimum leakage current. The leakage current density obtained was 1 fA/mgr;m2(at 10hyphen;V reverse bias voltage, for 2ndash;4hyphen;OHgr; cmnhyphen;type substrate). The results indicate that RTA can be used to obtain reproducible shallow junctions without significantly changing the implanted profile.