Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in highhyphen;dose As+hyphen;implanted (001)thinsp;Si

摘要

The formation of a twohyphen;layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp) have been observed by crosshyphen;sectional transmission electron microscopy in 80 keV, 1times;1016and 2times;1016/cm2As+hyphen;implanted (001)thinsp;Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops nearRp, and retardation of the epitaxial regrowth rate provide significant insight into the pointhyphen;defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.