Monolithic integration of a GaAlAs buriedhyphen;heterostructure laser and a bipolar phototransistor

摘要

A GaAlAs buriedhyphen;heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Commonhyphen;emitter current gains for the phototransistor of 100ndash;400 and light responsivity of 75 A/W (for wavelengths of 0.82 mgr;m) at collector current levels of 15 mA were obtained.