...
首页> 外文期刊>ACS nano >Spectroelectrochemistry of CdSe/Cd x Zn1–x S Nanoplatelets
【24h】

Spectroelectrochemistry of CdSe/Cd x Zn1–x S Nanoplatelets

机译:CdSe/Cd x Zn1–x S 纳米片的光谱电化学

获取原文
获取原文并翻译 | 示例

摘要

We report an unexpected enhancement of photoluminescence (PL) in CdSe-based core/shell nanoplatelets (NPLs) upon electrochemical hole injection. Moderate hole doping densities induce an enhancement of more than 50 in PL intensity. This is accompanied by a narrowing and blue-shift of the PL spectrum. Simultaneous, time-resolved PL experiments reveal a slower luminescence decay. Such hole-induced PL brightening in NPLs is in stark contrast to the usual observation of PL quenching of CdSe-based quantum dots following hole injection. We propose that hole injection removes surface traps responsible for the formation of negative trions, thereby blocking nonradiative Auger processes. Continuous photoexcitation causes the enhanced PL intensity to decrease back to its initial level, indicating that photocharging is a key step leading to loss of PL luminescence during normal aging. Modulating the potential can be used to reversibly enhance or quench the PL, which enables electro-optical switching.
机译:我们报告了电化学空穴注入后基于CdSe的核/壳纳米片(NPL)中光致发光(PL)的意外增强。适度的空穴掺杂密度可使PL强度提高50%以上。这伴随着PL光谱的变窄和蓝移。同时进行的时间分辨PL实验揭示了较慢的发光衰减。NPL中这种空穴诱导的PL增亮与通常观察到的空穴注入后CdSe基量子点的PL淬灭形成鲜明对比。我们提出空穴注入去除了负责形成负三子的表面陷阱,从而阻止了非辐射俄歇过程。连续光激发使增强的PL强度降低到其初始水平,表明光充电是导致PL在正常老化过程中失去发光的关键步骤。调制电位可用于可逆地增强或淬灭 PL,从而实现电光开关。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号