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Development of Zr- and Gd-doped porous ceria (pCeO(2)) abrasives for achieving high-quality and high-efficiency oxide chemical mechanical polishing

机译:开发Zr和Gd掺杂的多孔铈(pCeO(2))磨料,以实现高质量和高效率的氧化物化学机械抛光

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摘要

Porous ceria (pCeO(2)), Zr-doped pCeO(2) (pCeZrO(2)), and Gd-doped pCeO(2) (pCeGdO(2)) abrasives for both surface quality and removal rate improvements were developed using a facile one-pot solvothermal approach. The resulting products were characterized via XRD, SEM, TEM, HRTEM, Raman spectroscopy, UV-visible spectros-copy, and N-2 adsorption-desorption measurements. Raman spectra revealed that oxygen vacancies were the dominant defects in pCeO(2) nanospheres. Zr-and Gd-doping treatments contributed to oxygen vacancy enrichment, thus leading to an increased content of trivalent cerium (Ce3+) formed on the pCeO(2) surfaces. Oxide-CMP capability of pure pCeO(2), pCeZrO(2), and pCeGdO(2) abrasives were compared in terms of surface morphology/roughness/defect, topographical variation, as well as material removal rate (MRR). Atomic force microscopy and interferometric microscopy investigations showed that both pCeO(2), pCeZrO(2), and pCeGdO2 abrasives achieved high-quality surfaces with ultra-low roughness (0.11-0.14 nm Ra, 0.13-0.17 nm RMS). As expected, the MRR was accelerated by 78.7 in alkaline slurries containing pCeGdO(2) abrasives compared to the undoped pCeO(2). The improved CMP performance might be attributed to the reduced modulus, the expend pore size, as well as the enriched Ce3+ and oxygen vacancy. Furthermore, the interfacial action and removal mechanism of the pCeO(2) abrasives were discussed on the basis of their structure feature and surface chemistry.
机译:采用简单的一锅溶剂热法开发了多孔铈 (pCeO(2))、Zr 掺杂 pCeO(2) (pCeZrO(2)) 和 Gd 掺杂 pCeO(2) (pCeGdO(2)) 磨料,用于改善表面质量和去除率。通过XRD、SEM、TEM、HRTEM、拉曼光谱、紫外-可见光谱复制和N-2吸附-脱附测量对所得产物进行了表征。拉曼光谱显示,氧空位是pCeO(2)纳米球的主要缺陷。Zr和Gd掺杂处理有助于氧空位富集,从而导致pCeO(2)表面形成的三价铈(Ce3+)含量增加。比较了纯pCeO(2)、pCeZrO(2)和pCeGdO(2)磨料的氧化物-CMP能力,包括表面形貌/粗糙度/缺陷、形貌变化以及材料去除率(MRR)。原子力显微镜和干涉显微镜研究表明,pCeO(2)、pCeZrO(2)和pCeGdO2磨料均具有超低粗糙度(0.11-0.14 nm Ra,0.13-0.17 nm RMS)的高质量表面。正如预期的那样,与未掺杂的pCeO(2)相比,含有pCeGdO(2)磨料的碱性浆料的MRR加速了78.7%。CMP性能的提高可能归因于模量降低、孔径扩大以及Ce3+和氧空位的富集。此外,还从结构特征和表面化学性质上讨论了pCeO(2)磨料的界面作用和去除机理。

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