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Naphthalene-Diimide-Based Small Molecule Containing a Thienothiophene Linker for n-Type Organic Field-Effect Transistors

机译:含有噻吩噻吩连接子的萘-二酰亚胺基小分子,用于n型有机场效应晶体管

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摘要

A naphthalene diimide (NDI)-based small molecule with a thienothiophene linker (NDI-TT-NDI) was synthesized for use as a semiconductor layer in solution-processable n-type organic field-effect transistors (OFETs). The thienothiophene linker was introduced to the donor site between the two NDIs to impart planarity to the molecular backbone, which is favorable for inducing high crystallinity, and the morphological and crystal characteristics of the resulting film were analyzed. An additional annealing treatment applied to the NDT-TT-NDI films changed their orientation such that the molecular ordering and crystallinity of the film were significantly improved at a specific annealing temperature. The optimally annealed NDI-TT-NDI film exhibited a distinct edge-on molecular orientation with a narrow intermolecular pi-pi stacking distance, which is advantageous for lateral charge transport along the stacks. Consequently, an optimally annealed NDI-TT-NDI-based OFET exhibited electron mobilities of up to 0.032 cm(2)V(-1)s(-1) and an on/off ratio of 1.0 x 10(7).
机译:合成了一种基于萘二酰亚胺(NDI)的小分子噻吩接头(NDI-TT-NDI),用作溶液可加工n型有机场效应晶体管(OFET)中的半导体层。将噻吩噻吩接头引入两个NDIs之间的供体位点,赋予分子骨架平坦性,有利于诱导高结晶度,并分析了所得薄膜的形貌和晶体特性。对NDT-TT-NDI薄膜进行额外的退火处理改变了它们的方向,使得在特定的退火温度下,薄膜的分子有序性和结晶度得到了显着改善。最佳退火的NDI-TT-NDI薄膜表现出明显的边缘分子取向,分子间pi-pi堆积距离较窄,有利于沿堆叠的横向电荷传输。因此,最佳退火的NDI-TT-NDI-基OFET表现出高达0.032 cm(2)V(-1)s(-1)的电子迁移率和1.0 x 10(7)的开/关比。

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