Ion-beam synthesis of InSb nanocrystals at the Si/SiO_2 interface

摘要

The formation of InSb nanocrystals at the bonding Si/SiO2 interface of silicon-on-insulator structure was obtained as a result of the In and Sb atom diffusion from the ion-implanted SiO2 and Si regions, respectively, toward the interface. After the annealing at 1000 degrees C, the Raman scattering peaks corresponding to the transverse and longitudinal optical phonon mode in the monocrystalline InSb matrix were obtained. As the annealing temperature grew to 1100 degrees C, the transverse optical phonon mode vanished and the longitudinal optical phonon mode dominated in the spectrum. This effect is explained by matching InSb and Si lattice constants under ion beam synthesis conditions.