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Epitaxial growth of high-entropy alloy thin film with spontaneous exchange bias

机译:具有自发交换偏置的高熵合金薄膜的外延生长

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摘要

High-entropy alloys (HEAs) have attracted extensive research interest for their outstanding mechanical, electrochemical, and magnetic properties due to the highly random occupation of near equimolar multi-principal elements. The functionalities are severely influenced by the highly disordered lattice structure at grain boundaries and random orientation of grains in polycrystalline samples. Here, epitaxial CrMnFeCoNi HEA thin films of (001) orientation are prepared by laser-assisted molecular beam epitaxy on MgO substrates using a Cu buffer layer. A spontaneous exchange bias (SEB) effect is observed in a 98 nm thick CrMnFeCoNi HEA thin film. The SEB effect is related to a newly formed ferromagnetic (FM)/spin glass (SG) interface generated by field-induced irreversible growth of FM regions. The interfacial spins of SG domains are gradually consumed during the initial magnetizing process, leading to the consequent reservation of unidirectional anisotropy. The observation of SEB in HEA films expands their functions, which may be applied in novel magnetic devices. Published under an exclusive license by AIP Publishing.
机译:高熵合金(HEAs)因其优异的力学、电化学和磁性而引起了广泛的研究兴趣,因为其近等摩尔多主元素具有高度的随机性。多晶样品中晶界高度无序的晶格结构和晶粒的随机取向严重影响了这些功能。本文采用Cu缓冲层在MgO衬底上通过激光辅助分子束外延制备了(001)取向的CrMnFeCoNi HEA薄膜。在 98 nm 厚的 CrMnFeCoNi HEA 薄膜中观察到自发交换偏置 (SEB) 效应。SEB效应与场诱导的FM区域不可逆生长产生的新形成的铁磁(FM)/自旋玻璃(SG)界面有关。SG畴的界面自旋在初始磁化过程中逐渐被消耗,导致随之而来的单向各向异性保留。SEB在HEA薄膜中的观察扩展了其功能,可应用于新型磁性器件中。由 AIP Publishing 独家许可发布。

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