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首页> 外文期刊>Optical and Quantum Electronics >Enhancing quantum correlation at zero-IF band by confining the thermally excited photons: InP hemt circuitry effect
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Enhancing quantum correlation at zero-IF band by confining the thermally excited photons: InP hemt circuitry effect

机译:Enhancing quantum correlation at zero-IF band by confining the thermally excited photons: InP hemt circuitry effect

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Abstract The microwave quantum correlation as a crucial issue in quantum technology is analyzed and studied. An open quantum system operating at 4.2 K is designed in which InP HEMT as the nonlinear component couples two external oscillators. The quantum theory is applied to analyze the system completely. The Lindblad Master equation is used to analyze the time evolution of the expanded closed system that covers the environmental effects. In the following, the state of the system defined is determined in terms of the ensemble average state using the density matrix; then, the ensemble average of the different operators is calculated. Accordingly, the covariance matrix of the quantum system is derived, and the quantum discord as a key quantity to determine the quantum correlation is calculated. As an interesting point, the results show that InP HEMT mixes two coupling oscillator modes so that the quantum correlation is created at different frequency productions, especially the zero-IF band. Nonetheless, the main point is that one can strongly manipulate the quantum correlation in the zero-IF using circuitry engineering. It is established by increasing the operational frequencies in the quantum system leading to dramatically limiting the thermal noise since the zero-IF band remains unchanged.

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