Pinning of Domain Wall in Composite Ferromagnetic Nanowire Consisting of Two Layers With Distinct Magnetic Anisotropy

摘要

We present the results of micromagnetic simulations of controlled domain wall (DW) pinning in a multilayer ferromagnetic nanowire, consisting of Co layer with planar anisotropy and CoPt layer with perpendicular magnetic anisotropy. The CoPt layer contains a modified region with reduced anisotropy, which serves as a controlled gate for the pinning of DW moving in the Co layer. The peculiarities of the DW pinning/depinning processes are studied depending on the direction of magnetization in the modified CoPt region, as well as on the geometric and material parameters of the system. The possibility of application for logical computing is discussed.