机译:Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications
Department of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an, China;
State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, China;
Department of Engineering–Electrical Engineering Division, University of Cambridge, Cambridge, U.K.;
Silicon carbide; MOSFET; Cryogenics; Temperature distribution; Temperature dependence; Semiconductor device modeling; 1.2 kV SiC planar MOSFET; 1.2 kV SiC trench MOSFET; avalanche capability; cryogenic temperature; Unclamped inductive switching (UIS);