A Wide Temperature-Range Measuring Unit for Registering the Parameters of Semiconductor Pulsed-Laser Emission Fields

摘要

The main problems of measuring the spatial distribution of the emission intensity of high-power semiconductor pulsed lasers are stated and engineering solutions that provide such measurements in a wide temperature range are presented. The visualization features of the obtained results are demonstrated. It is concluded that an analysis of the parameters of the registered emission distributions allows one to determine the temperature effect on the generation processes in semiconductor lasers and to make a decision on the potential application fields of the tested radiators in optoelectronic devices.