Narrow-Band Blue-Emitting Indium Phosphide Quantum Dots Induced by Highly Active Zn Precursor

摘要

Colloidal indium phosphide quantum dots (In(Zn)P/ZnS QDs) show potentialfor application in the field of light emitting diodes (LED) and Mini/Micro-LEDs displays due to their tunable emission and low toxicity. However, theperformance of blue-emitting indium phosphide QDs is still lagging behindthat of red and green. Herein, a facile method to overcome this difficulty isproposed. The highly active Zn(ClO_4)_2 precursor is injected into the reactionmixture during the nucleation process to enhance zinc incorporation, whichgenerates the In(Zn)P alloy QDs with enlarged bandgap. At the same time,the increase of zinc content can inhibit excessive growth of In(Zn)P QDs, andsignificantly improve its size distribution. The monodisperse In(Zn)P/ZnSQDs exhibit excellent blue emission (466 nm) and have the narrowest fullwidth at half maxima (41 nm) of blue emission In(Zn)P QDs ever reported.This work provides a feasible and effective strategy for obtaining narrow-bandblue-emitting In(Zn)P/ZnS QDs.