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Lead indium niobate-lead magnesium niobate-lead titanate based whispering gallery mode resonator

机译:铌酸铅铟-铅铌酸镁-钛酸铅基耳语画廊模式谐振器

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摘要

Whispering gallery mode resonators (WGMRs) have garnered significant interest due to their potential applications in the fields of electro-optic modulation and microwave to optical photon conversion. In this study, we have leveraged an electro-optic crystal, lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT), to fabricate a high-quality WGMR. Our investigation revealed that the crystal composition used in this work is 0.24PIN-0.45PMN-0.31PT, and each element of the whole sample is homogeneously distributed. The dielectric properties of the sample revealed the necessity of limiting the temperature and external electric field frequency to below 100 °C and 106 Hz, respectively. The obtained optical quality factor value (Q value) of the resonator is ∼0.7 × 105. Impressively, our resonator could be conveniently tuned by exploiting the enormous inverse piezoelectric effect d31 of the crystal, thereby alleviating the need for precise fabrication. Furthermore, a theoretical analysis of our resonator revealed that a calculated resonance wavelength shift is within a broad range of 2.16 nm. Intriguingly, if the surface roughness of the resonator is reduced tenfold, we can increase the calculated Q value dependent on surface scattering by 104. Our finding showcases the tremendous potential of the PIN-PMN-PT crystal-based WGMR as versatile building blocks for a variety of applications in the burgeoning field of photonic technology.
机译:耳语画廊模式谐振器(WGMR)因其在电光调制和微波到光子转换领域的潜在应用而引起了人们的极大兴趣。在这项研究中,我们利用电光晶体铌酸铅铟-铅镁铌酸铅-钛酸铅(PIN-PMN-PT)来制造高质量的WGMR。我们的研究表明,这项工作中使用的晶体成分为0.24PIN-0.45PMN-0.31PT,并且整个样品的每个元素都是均匀分布的。样品的介电特性表明,有必要将温度和外部电场频率分别限制在100 °C和106 Hz以下。谐振器得到的光学品质因数值(Q值)为∼0.7×105。令人印象深刻的是,我们的谐振器可以通过利用晶体的巨大逆压电效应d31来方便地进行调整,从而减轻了对精确制造的需求。此外,对谐振器的理论分析表明,计算出的共振波长偏移在2.16 nm的宽范围内。有趣的是,如果谐振器的表面粗糙度降低十倍,我们可以将计算出的取决于表面散射的 Q 值增加 104。我们的发现展示了基于PIN-PMN-PT晶体的WGMR的巨大潜力,作为新兴光子技术领域各种应用的多功能构建模块。

著录项

  • 来源
    《Journal of Applied Physics》 |2023年第17期|173104-1-173104-8|共8页
  • 作者单位

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong Universit;

    The Shaanxi Key Laboratory of Integrated Circuits and Systems, School of Microelectronics, Xidian University;

    Max Planck Institute for the Science of LightKey Laboratory of Optoelectronics Information and Sensing Technologies of Guangdong Higher Education Institutes, Jinan University;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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