...
【24h】

Terahertz Oscillator Chips Backside-Coupled to Unclad Microphotonics

机译:太赫兹振荡器芯片背面耦合至非包层微光子学

获取原文
获取原文并翻译 | 示例

摘要

Terahertz technology is largely dependent upon planar on-chip antennas that radiate downwards through the substrate, and so an effective means to interface these antennas with integrated waveguides is an attractive prospect. We present a viable methodology for backside coupling between a terahertz oscillator chip and a broadband all-intrinsic-silicon dielectric waveguide. Our investigation employs resonant tunneling diodes as compact two-terminal electronic terahertz oscillators, and terahertz waves are observed from 270 GHz to 404 GHz. The fact that this power is accessed via a curved length of silicon waveguide validates successful backside coupling.
机译:太赫兹技术很大程度上依赖于通过基板向下辐射的平面片上天线,因此将这些天线与集成波导连接起来的有效方法是一个有吸引力的前景。我们提出了一种可行的太赫兹振荡器芯片和宽带全本征硅介质波导之间的反向耦合方法。我们的研究采用谐振隧穿二极管作为紧凑型双端电子太赫兹振荡器,并在 270 GHz 至 404 GHz 范围内观察到太赫兹波。该电源通过弯曲长度的硅波导访问,这一事实验证了成功的背面耦合。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号