Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

摘要

In this research work, design of the Extended Field Plate Length (E-FPL) T-gate with Fe doped AlGaN buffer structure on the graded Aluminum Gallium nitride (AlGaN)/ Gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed. The gate length of 60 nm with an Ex(FPL) up to 50 nm towards the drain shows remarkable improvement in breakdown voltage. Meanwhile, the drain current (I-DS) and transconductance (G(M)) is further improved by the Fe doped AlGaN Buffer design. In radio frequency (RF) small signal analysis this device exhibits a peak current-gain cutoff frequency f(T) of 148 GHz. This device has improved transconductance of 24 with high frequency has compared with conventional GaN HEMT device. It is highly compatible with military applications such as Radio Frequency (RF) upstream transmitters, ship and aircraft communication transmitters and High-frequency Radars (HFRs).