We propose a novel and compact common mirror Michelson modulator (CMMM) with V pi L pi of 0.38 V-cm. This is the best reported value of V pi L pi for a silicon photonic Michelson modulator. Firstly, a simplified transfer matrix model evaluating the transmission response of CMMM is evaluated. We report the GDSII layout of CMMM using state of the art AIM PHOTONICS PDK with a design floorplan of 1200 mu m x 500 mu m. The inverted L shaped ILS-PN phase shifter (n = 1e18 cm(-3); p = 3.5e17 cm(-3)) is proposed, evaluated and compared with the nominal horizontal PN variant. The ILS-PN variants have a higher value of phase change for a given V-bias and concentration. This leads to a better modulation efficiency (V pi L pi of 0.38 V-cm) at a higher effective index modulation (3.4 x 10(-4)). The effect of doping profile (DP) and source impedance Zs on the bitrate and extinction ratio (ER) of the optical transmission is evaluated and speeds of 50 Gbps with ER of 3.21 dB and E/bit of 1.5 pJ/bit are reported for the novel ILS-PN based CMMM. Effect of DP and Zs on Bit error rate and ER of CMMM is evaluated for comparison.
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机译：我们提出了一种新型紧凑的共镜迈克尔逊调制器（CMMM），其V pi L pi为0.38 V-cm。这是硅光子迈克尔逊调制器的 V pi L pi 的最佳报告值。首先，评估了评估CMMM透射响应的简化传递矩阵模型;我们报告了使用最先进的 AIM PHOTONICS PDK 的 CMMM 的 GDSII 布局，设计平面图 1200 μm x 500 μm。提出了倒L形ILS-PN移相器（n = 1e18 cm（-3）;p = 3.5e17 cm（-3）），并与标称水平PN变体进行了比较。对于给定的 V 偏置和浓度，ILS-PN 变体具有更高的相变值。这导致在更高的有效折射率调制（3.4 x 10（-4））下获得更好的调制效率（V pi L pi为0.38 V-cm）。评估了掺杂曲线（DP）和源阻抗Zs对光传输比特率和消光比（ER）的影响，并报道了基于ILS-PN的新型CMMM的50 Gbps速度，ER为3.21 dB，E/bit为1.5 pJ/bit。评估DP和Zs对CMMM误码率和ER的影响进行比较。
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