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Multivalent Ion Transport in Anti-Perovskite Solid Electrolytes

机译:抗钙钛矿固体电解质中的多价离子传递

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Batteries based on the shuttling of multivalent (MV) ions are attractive energy storage systems due to their potential to transfer multiple electrons per working ion. Nevertheless, these batteries remain in an early stage of development, and performance improvements are desired for electrolytes that can transport MV ions efficiently and for cathode materials that can store MV ions at high capacity. The present study explores potential MV solid electrolytes (SEs) based on the anti-perovskite (AP) structure. Ten SE compositions are considered: Mg_(3)NX, Ca_(3)NX (where X = P, As, Sb, or Bi), Ca_(3)PSb, and Ca_(3)AsSb. First-principles calculations are used to predict several properties that are relevant for SE performance: stability, band gaps, elastic moduli, ion migration barriers, and defect formation energies. All compounds are predicted to be thermodynamically stable at 0 K. Similar to the monovalent AP SEs, lattice distortions in the MV systems decrease the energy barrier for percolating ion migration. Large energies associated with the formation of vacancies and interstitials imply that achieving high conductivities will require defect concentrations that are controlled via doping or composition variation. Of the compounds investigated, Mg_(3)NAs, Ca_(3)NAs, and Ca_(3)PSb are the most promising. These SEs are predicted to be stable against Mg or Ca anodes and have barriers for vacancy migration that are less than ∼500 meV (less than ∼200 meV for interstitial migration). Stability against oxidation is maintained up to 1.2–1.7 V, implying that interfacial coatings may be needed to achieve compatibility with high-voltage cathodes.
机译:基于多价 (MV) 离子穿梭的电池是有吸引力的储能系统,因为它们有可能为每个工作离子转移多个电子。尽管如此,这些电池仍处于开发的早期阶段,对于能够有效传输中压离子的电解质和能够高容量存储中压离子的阴极材料,需要提高性能。本研究探索了基于抗钙钛矿(AP)结构的潜在MV固体电解质(SEs)。考虑了十种 SE 成分:Mg_(3)NX、Ca_(3)NX(其中 X = P、As、Sb 或 Bi)、Ca_(3)PSb 和 Ca_(3)AsSb。第一性原理计算用于预测与 SE 性能相关的几个特性:稳定性、带隙、弹性模量、离子迁移势垒和缺陷形成能。预计所有化合物在0 K时都具有热力学稳定性。 与单价AP SEs类似,MV系统中的晶格畸变降低了渗流离子迁移的能量势垒。与空位和间隙形成相关的大能量意味着实现高电导率将需要通过掺杂或成分变化来控制缺陷浓度。在所研究的化合物中,Mg_(3)NAs、Ca_(3)NAs和Ca_(3)PSb是最有前途的。预计这些 SE 对 Mg 或 Ca 阳极具有稳定性,并且具有小于 ∼500 meV(间隙迁移小于 ∼200 meV)的空位迁移屏障。抗氧化稳定性保持在高达 1.2–1.7 V 的电压下,这意味着可能需要界面涂层才能实现与高压阴极的兼容性。

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