Dielectric anomalies and structure evolution of annealed (1-x)Pb(Sc1/2Ta1/2)O3-xPb(In1/2Nb1/2)O3 ceramics

摘要

? 2022The (1-x)Pb(Sc1/2Ta1/2)O3-xPb(In1/2Nb1/2)O3 (1-x)PST-xPIN (x = 0.2, 0.4, 0.6, and 0.8) solid-solution ceramics were synthesized by conventional solid-state reaction method. The phase structure, microstructure, and dielectric properties were analysed. In order to obtain various ordering degrees, annealing treatment at 700 °C for 10 h, 20 h, 40 h, and 120 h was conducted on (1-x)PST-xPIN ceramics. The degree of ordering increased significantly with the extension of annealing time in 0.8PST-0.2PIN composition. However, for other compositions, no any superlattice peak was observed at all times of annealing process, which was related to the presence of more pyrochlore phase. In addition to the low-temperature relaxation peaks associated with the disordered arrangement of B-site ions, two new dielectric anomalies were found in the temperature dependence of dielectric constant of annealed (1-x)PST-xPIN solid solution. For annealed 0.8PST-0.2PIN composition, the middle-temperature and high-temperature dielectric anomalies were attributed to the ordered PST region and the incommensurate structure induced by the competition between ordered PST and disordered PST, respectively. The high-temperature dielectric anomalies in 0.6PST-0.4PIN and 0.4PST-0.6PIN compositions originated from the contribution of the ordered PIN region in solid solution. Furthermore, the relatively weak superlattice diffraction spots of (111) were found in selected-area electron diffraction patterns of annealed 0.8PST-0.2PIN ceramic, indicating that the existence of alternately ordering arrangement of B-site ions. Combined with the analysis of element mapping, it was concluded that the annealed (1-x)PST-xPIN solid solution was composed of the ordered PST region, the ordered PIN region, and the disordered region constituted by PST and/or PIN.