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机译:Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE
Alferov Univ;
St Petersburg State Univ;
HSE UnivIoffe Inst;
InGaN; nanowires; miscibility gap; molecular beam epitaxy; silicon; multi-colour emission; PHOSPHOR-FREE; EMITTING-DIODES; SILICON; TEMPERATURE; TUNABILITY;