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Ternary Cu2SnS3: Synthesis, Structure, Photoelectrochemical Activity, and Heterojunction Band Offset and Alignment

机译:三元Cu2SnS3:合成、结构、光电化学活性、异质结带偏移和取向

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摘要

Ternary Cu_(2)SnS_(3) (CTS) is an attractive nontoxic and earth-abundant absorber material with suitable optoelectronic properties for cost-effective photoelectrochemical applications. Herein, we report the synthesis of high-quality CTS nanoparticles (NPs) using a low-cost facile hot injection route, which is a very simple and nontoxic synthesis method. The structural, morphological, optoelectronic, and photoelectrochemical (PEC) properties and heterojunction band alignment of the as-synthesized CTS NPs have been systematically characterized using various state-of-the-art experimental techniques and atomistic first-principles density functional theory (DFT) calculations. The phase-pure CTS NPs confirmed by X-ray diffraction (XRD) and Raman spectroscopy analyses have an optical band gap of 1.1 eV and exhibit a random distribution of uniform spherical particles with size of approximately 15–25 nm as determined from high-resolution transmission electron microscopy (HR-TEM) images. The CTS photocathode exhibits excellent photoelectrochemical properties with PCE of 0.55 (fill factor (FF) = 0.26 and open circuit voltage (Voc) = 0.54 V) and photocurrent density of −3.95 mA/cm~(2) under AM 1.5 illumination (100 mW/cm~(2)). Additionally, the PEC activities of CdS and ZnS NPs are investigated as possible photoanodes to create a heterojunction with CTS to enhance the PEC activity. CdS is demonstrated to exhibit a higher current density than ZnS, indicating that it is a better photoanode material to form a heterojunction with CTS. Consistently, we predict a staggered type-II band alignment at the CTS/CdS interface with a small conduction band offset (CBO) of 0.08 eV compared to a straddling type-I band alignment at the CTS/ZnS interface with a CBO of 0.29 eV. The observed small CBO at the type-II band aligned CTS/CdS interface points to efficient charge carrier separation and transport across the interface, which are necessary to achieve enhanced PEC activity. The facile CTS synthesis, PEC measurements, and heterojunction band alignment results provide a promising approach for fabricating next-generation Cu-based light-absorbing materials for efficient photoelectrochemical applications.
机译:三元Cu_(2)SnS_(3) (CTS) 是一种有吸引力、无毒且富含地球的吸收材料,具有合适的光电特性,适用于具有成本效益的光电化学应用。在此,我们报道了使用低成本简易热注入路线合成高质量CTS纳米颗粒(NPs),这是一种非常简单且无毒的合成方法。利用各种最先进的实验技术和原子第一性原理密度泛函理论(DFT)计算,系统地表征了合成的CTS NPs的结构、形貌、光电和光电化学(PEC)性质以及异质结能带排列。通过 X 射线衍射 (XRD) 和拉曼光谱分析确认的相纯 CTS NP 具有 1.1 eV 的光学带隙,并且表现出均匀球形颗粒的随机分布,其尺寸约为 15–25 nm,从高分辨率透射电子显微镜 (HR-TEM) 图像中确定。在AM 1.5光照(100 mW/cm~(2))下,CTS光电阴极表现出优异的光电化学性能,PCE为0.55%(填充因子(FF)=0.26,开路电压(Voc)=0.54 V),光电流密度为−3.95 mA/cm~(2)。此外,还研究了CdS和ZnS NPs的PEC活性,作为可能的光阳极,与CTS形成异质结以增强PEC活性。CdS表现出比ZnS更高的电流密度,表明它是一种更好的光阳极材料,可以与CTS形成异质结。 一致地,我们预测CTS/CdS界面处的交错II型能带排列具有0.08 eV的小导带偏移(CBO),而CTS/ZnS界面的交叉I型能带排列的CBO为0.29 eV。在II型带对齐的CTS/CdS界面上观察到的小CBO表明,电荷载流子在界面上具有有效的分离和传输,这是实现增强PEC活性所必需的。简单的CTS合成、PEC测量和异质结带对齐结果为制造下一代铜基吸光材料提供了一种有前途的方法,用于高效的光电化学应用。

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