Preparation of Si thin films on copper foil using pulse current electrodeposition

摘要

Si has extremely high specific capacity, which has been widely used in the field of new energy materials. In this paper, Si thin films was prepared on copper foil by pulse current electrodeposition, and the electrodeposition process was systematically analyzed. For a comparison, Si thin films prepared by Direct Current (DC) electrodeposition was also discussed. The research results show that the uniform and dense films can be prepared by pulse current electrodeposition using organic solvent, and the films is mainly composed of Si and SiOx. The electrodeposition can be divided into two stages: instantaneous nucleation and growth of Si, and the relatively dense Si thin films will be obtained on the working electrode (copper foil) surface.