Spin Injection Through Ferromagnetic/Organic Semiconductor Interfacial Defect States in Hybrid Magnetic Tunnel Junctions

摘要

In this article, we have worked on defect-assisted spin transport at the ferromagnetic (FM)/organic semiconductor (OSC) interfaces leading to modified TMR response in hybrid magnetic tunnel junction (MTJ) devices. The simulation considers non-equilibrium Green#x2019;s function (NEGF) assuming spin precession at the FM/OSC interface defect states. Both the carrier injection (band-to-band) and phonon-assisted tunneling through the organic spacer optical gap led to modified spin transfer torque (STT) across the MTJ devices. Higher compensation of spin damping due to out-of-plane STT led to higher TMR response for the MTJ devices.