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Switching between Z-scheme and type-II charge separation mechanisms in ZnO/ZnS composite photocatalyst by La doping

机译:La掺杂法在ZnO/ZnS复合光催化剂中切换Z型和II型电荷分离机理

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In order to study the photo-generated carrier transfer mechanism in ZnO/ZnS-based composite photocatalyst, a series of ZnO/ZnS composite samples were prepared by two-step method. Firstly, La-doped ZnO nanorods were grown on silica substrates with hydrothermal method, and then the nanorods were sulfurized in situ to form ZnO/ZnS heterojunctions. The effect of La doping concentration on the structural properties of ZnO nanorods was investigated. With the increase in La doping concentration, the diameter and density of ZnO nanorods increase, but when the doping concentration reaches 2.0, ZnO crystal quality degrades. Therefore, the ZnO nanorods with La doping concentration of 1.5 were used as matrix to study the effect of sulfurization time on the properties of ZnO/ZnS-based composite. With the increase in sulfurization time, the UV-vis absorbance of the samples first increases and then decreases. The composite photocatalyst with sulfurization time of 60 min shows the best UV-vis absorbance, and its photocatalytic performance is also the best. Then, the photo-generated carrier transfer mechanism in the ZnO/ZnS-based composite was studied. Because the Fermi level of ZnS is higher than that of ZnO, the electrons in ZnS would be transferred to ZnO when they form a heterojunction, then a built-in electric field is constructed from ZnS to ZnO. Generally, the photo-generated carrier transfer mechanism in ZnO/ZnS heterojunction follows a Z-scheme mechanism. However, when La element is doped at a concentration of 1.5, the Fermi level ZnO is increased and higher than that of ZnS. Then, the electrons in ZnO are transferred to ZnS to form a new built-in electric field from ZnO to ZnS in the heterojunction, and its direction is opposite to that of the undoped ZnO/ZnS composite sample. Then, the photo-generated carrier transfer mechanism in the composite is changed to type-II. Therefore, the photo-generated carrier transfer mechanism in the ZnO/ZnS-based composite can be tailored by La doping concentration.
机译:为研究ZnO/ZnS基复合光催化剂中光生载流子转移机理,采用两步法制备了一系列ZnO/ZnS复合样品。首先,采用水热法在二氧化硅衬底上生长La掺杂的ZnO纳米棒,然后对纳米棒进行原位硫化,形成ZnO/ZnS异质结。研究了La掺杂浓度对ZnO纳米棒结构性能的影响。随着La掺杂浓度的增加,ZnO纳米棒的直径和密度增加,但当掺杂浓度达到2.0%时,ZnO晶体质量下降。因此,以La掺杂浓度为1.5%的ZnO纳米棒为基体,研究了硫化时间对ZnO/ZnS基复合材料性能的影响。随着硫化时间的增加,试样的紫外-可见吸光度先增大后减小。硫化时间为60 min的复合光催化剂表现出最佳的紫外-可见吸光度,其光催化性能也是最好的。然后,研究了ZnO/ZnS基复合材料中的光生载流子转移机理。由于ZnS的费米能级高于ZnO,因此ZnS中的电子在形成异质结时会转移到ZnO上,然后从ZnS到ZnO构建一个内置电场。通常,ZnO/ZnS异质结中的光生载流子转移机理遵循Z-scheme机制。然而,当La元素掺杂浓度为1.5%时,费米能级ZnO升高,高于ZnS。然后,ZnO中的电子转移到ZnS上,在异质结中形成从ZnO到ZnS的新的内置电场,其方向与未掺杂的ZnO/ZnS复合样品的方向相反。然后,将复合材料中的光生载流子转移机制转变为II型。因此,ZnO/ZnS基复合材料中的光生载流子转移机理可以通过La掺杂浓度进行定制。

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