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Improving the performance of all-optical logic gates based on metal-insulator-metal heterogeneous plasmonic waveguide by Kerr nonlinearity effect

机译:基于金属-绝缘体-金属异质等离子体波导的Kerr非线性效应提高全光逻辑门性能

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摘要

In this paper, the nonlinear effect of Kerr on increasing the efficiency of multi-channel all-optical metal-insulator-metal logic gates with heterogeneous metals is investigated. In this study, linear interference between surface plasmonic polariton modes has been employed. The performance of OR, AND, XOR and NOR gates is numerically analyzed by the finite element method. A structure with fixed physical dimensions can manage several basic logic functions. By applying optical signals to various input ports in the proposed structure, we can implement OR, AND, and XOR logic functions. The NOR logic gate can be established by the addition of a control optical signal. It has been shown that the nonlinear material of Kerr increases the difference of field intensity between logic levels of "0" and "1" that are 77 V/m for OR gate, 133 V/m for AND gate, 89 V/m for XOR gate, and 138 V/m for NOR gate. Also, simulation results show the minimum extinction ratio (ER) of 33.5, 36.4, 45.4, and 42.4 dB for OR, AND, XOR, and NOR logic gates, respectively. The proposed all-optical logic gate has a simple and compact arrangement and it can be applied to many nanophotonic components used in optical communication networks.
机译:本文研究了Kerr对提高具有异质金属的多通道全光金属-绝缘体-金属逻辑门效率的非线性效应。在这项研究中,采用了表面等离子体极化激元模式之间的线性干涉。采用有限元方法对OR、AND、XOR和NOR门的性能进行了数值分析。具有固定物理尺寸的结构可以管理几个基本的逻辑功能。通过将光信号应用于所提出的结构中的各种输入端口,我们可以实现OR、AND和XOR逻辑功能。NOR逻辑门可以通过添加控制光信号来建立。研究表明,Kerr的非线性材料增加了“0”和“1”逻辑电平之间的场强差,OR门为77 V/m,AND门为133 V/m,XOR门为89 V/m,NOR门为138 V/m。此外,仿真结果显示,OR、AND、XOR和NOR逻辑门的最小消光比(ER)分别为33.5、36.4、45.4和42.4 dB。所提出的全光逻辑门具有简单紧凑的排列方式,可应用于光通信网络中使用的许多纳米光子元件。

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