Experimental study of how the photosensitive elements of optoelectronic devices react to pulsed illumination

摘要

This paper presents the results of a study of how pulsed radiation with a continuous spectrum created by a plasma light source based on magnetostriction discharge acts on the photosensitive elements of optoelectronic devices. The threshold values of the energy exposure are determined that cause a reduction of the photocurrent of a silicon element of a solar battery, reversible changes of the sensitivity of a silicon photodiode, and reversible changes of the sensitivity and resolving power of a silicon photodetector array with charge accumulation.