Abnormal topological domains in a high-density array of ferroelectric nanodots

摘要

Utilizing vector PFM (piezoresponse force microscopy) on high-density nanodot arrays, ferroelectric nanodots and domain structure in nanodot arrays were investigated in the current study. Accordingly, we identified four types of topological domain states based on the measurements of spontaneous polarization vectors vs writing results in nanodots. In addition to convergent and divergent domains with upward and downward polarization, double-center domains and triple-center domains were also identified. In addition, center domains could be reversibly switched under the electric field produced by the biased PFM tip, and their stability could be maintained by compensating the polarization charge with the accumulated charge. These stable topological domain states in discrete nanodots present an opportunity to further investigate their new properties in high-density memory devices.