High-Speed Epitaxial Growth of Terbium- and Europium-Doped Yttrium Aluminum Perovskite Thick Film Phosphors Using Laser-Assisted Chemical Vapor Deposition

摘要

A thick film scintillator with a few tens of micrometers thickness is expected to improve sensitivity and spatial resolution in radiation detection and imaging, while its production method is limited to a costly process of thinning a melt-grown single crystal ingot. Here, we demonstrated the high-speed epitaxial growth of terbium- and europium-doped yttrium aluminum perovskite (Tb~(3+):YAP and Eu~(3+):YAP) transparent thick film phosphor using laser-assisted chemical vapor deposition (CVD). The (110)-oriented YAP thick film was epitaxially grown on a (100) SrTiO_3, (STO) substrate. The deposition rate was 53 umh~(-1), which was 50-90 times faster than those reported for conventional thermal CVD. Under UV and X-ray irradiation, the films emitted green and orange lights originating from 4f→ 4f transitions of Tb~(3+) and Eu~(3+) centers, respectively. The fluorescence decay curves of the films were fitted to 1.96 and 1.89 ms for Tb~(3+) and Eu~(3+) centers. The 9um-thick Eu~(3+):YAP thick film phosphor can be used as a scintillation screen of X-ray imaging test to see though a semiconductor storage device.