Drag Resistivity of Hole-Hole Static Interactions with the Effect of Non- Homogeneous Dielectric Medium

摘要

Background: We have studied the Coulomb drag phenomena for hole-hole static potentials theoretically and measured numerically using the random phase approximation (RPA) method. Objective: The drag resistivity is evaluated at low temperature, large interlayer separation limit and weakly screening regime, with the geometry of two atomically thin materials, such as BLG/GaAsbased multilayer system, which is a promising system in nanomaterials and technology. Methods: Static local field corrections (LFC) are considered to take into account the Exchangecorrelations (XC) and mutual interaction effects with varying concentrations of the active and passive layer. Results: It has been found that the drag resistivity gets enhanced on using the LFC effects and increases on increasing the effective mass. In Fermi-Liquid regime, drag resistivity is directly proportional to T 2 , n -3 , d -4 and ε 2 with respect to temperature (T), density (n), interlayer separation (d~nm) and dielectric constant (ε 2 ), respectively. Conclusion: Dependency of drag resistivity is measured and compared to 2D e-e and e-h coupledlayer systems with and without the effect of non-homogeneous dielectric medium.